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Enhanced performance of spectra stable blue perovskite light-emitting diodes through Poly(9-vinylcarbazole) interlayer incorporation

机译:通过聚(9-乙烯基咔唑)中间层掺入,增强光谱稳定的蓝钙钛矿发光二极管的性能

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摘要

Since the emergence of organic-inorganic hybrid perovskites, the development of perovskite light-emitting diodes (PeLEDs) with green/red emission have made great progress, and the corresponding external quantum efficiency (EQE) has exceeded 20%. However, the research progress of blue-emitting PeLED still has certain challenges. In this article, a multi-cation per-bromine perovskite film is prepared by introducing polymer molecules poly(9-vinylcarbazole) (PVK) in an anti-solvent (chloroform). When the concentration of PVK is optimized to 0.1 mg/mL, a smooth, dense, high-quality film with photoluminescence quantum efficiency (PLQY) up to 20.70% is obtained. The introduction of PVK can assist the formation of perovskite films for interface modification via surface defect passivation. The optimized blue PeLED has a maximum brightness of 3136 cd/m~2 and a maximum EQE of 3.49% at 488 nm. More importantly, the optimized blue PeLED has excellent color stability under high applied voltage up to 12 V or continuous operation.
机译:由于有机无机杂交钙钛矿的出现,具有绿色/红色发射的钙钛矿发光二极管(PELED)的发展已经取得了很大进展,并且相应的外部量子效率(EQE)已超过20%。然而,蓝色发光封面的研究进展仍然存在某些挑战。在本文中,通过在抗溶剂(氯仿)中引入聚合物分子聚(9-乙烯基咔唑)(PVK)来制备多阳离子每溴钙钛矿膜。当PVK的浓度优化至0.1mg / ml时,获得高达20.70%的光致发光量子效率(PLQy)的光滑,致密的高质量薄膜。 PVK的引入可以通过表面缺陷钝化来帮助形成钙钛矿薄膜进行界面改性。优化的蓝色封面的最大亮度为3136cd / m〜2,最大EQE为3.49%,488 nm。更重要的是,优化的蓝色封面在高达12 V或连续操作的高施加电压下具有出色的色彩稳定性。

著录项

  • 来源
    《Organic Electronics》 |2021年第9期|106259.1-106259.7|共7页
  • 作者单位

    School of Electrical and Control Engineering Shaanxi University of Science and Technology Xi'an 710021 Shaanxi PR China;

    Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key lab of Information Photonic Technique School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 Shaanxi PR China;

    School of Electrical and Control Engineering Shaanxi University of Science and Technology Xi'an 710021 Shaanxi PR China;

    School of Information Science and Technology Northwest University Xi'an Shannxi 710069 PR China;

    Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key lab of Information Photonic Technique School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 Shaanxi PR China;

    School of Electrical and Control Engineering Shaanxi University of Science and Technology Xi'an 710021 Shaanxi PR China;

    Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key lab of Information Photonic Technique School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 Shaanxi PR China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Light-emitting diode; Interface modification; Perovskite; High stability;

    机译:发光二极管;接口修改;Perovskite;高稳定性;

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