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首页> 外文期刊>Organic Electronics >UV- ozone treated graphene oxide/ PEDOT:PSS bilayer as a novel hole transport layer in highly efficient and stable organic solar cells
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UV- ozone treated graphene oxide/ PEDOT:PSS bilayer as a novel hole transport layer in highly efficient and stable organic solar cells

机译:UV-臭氧处理的氧化石墨烯/ PEDOT:PSS双层作为高效稳定的有机太阳能电池中的新型空穴传输层

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摘要

The utilization of UV-ozone (UVO) treated graphene oxide (GO)/PEDOT:PSS bilayer as hole transport layer (HTL) in solution processed organic solar cells (OSCs) is demonstrated. The HTLs were treated with UVO for 0, 5, 10 and 15 min. The 10 min treated OSC showed the best performance and displayed power conversion efficiency (PCE) of 5.24%, much higher than the untreated OSC device. This enhanced performance is mainly driven by improvements in the short circuit current (similar to 10.82 mA/cm(2)) as well as the fill factor (similar to 57%) that is ascribed to the moderate reduction of GO and increased work function (WF) of PEDOT:PSS after UVO treatment, which improved the contact conditions between the HTL and photoactive layer. Consequently, extraction efficiency of the photogenerated holes is increased, while recombination probability of holes and electrons in the photoactive layer is decreased. Moreover, the UVO-reduction of GO and consequently increased conductivity of reduced-GO (r-GO) has been modeled and proved using the density functional theory (DFT) simulation. Meanwhile, the 15 min UVO-treated OSC device showed severe reduction in the PCE that dropped to 2.11%, possibly due to various factors such as decomposition of chemical bonds, significant increase in the series resistance and pronounced drop in the photovoltaic performance parameters.
机译:演示了在溶液处理的有机太阳能电池(OSC)中利用紫外线臭氧(UVO)处理的氧化石墨烯(GO)/ PEDOT:PSS双层作为空穴传输层(HTL)的用途。将HTL用UVO处理0、5、10和15分钟。经过10分钟处理的OSC表现出最佳性能,并显示出5.24%的功率转换效率(PCE),远高于未经处理的OSC器件。这种增强的性能主要是由短路电流(类似于10.82 mA / cm(2))以及填充系数(类似于57%)的改善所推动的,归因于GO的适度降低和功函数的提高( UVO处理后的PEDOT:PSS WF),改善了HTL与光敏层之间的接触条件。因此,提高了光生空穴的提取效率,同时降低了光敏层中空穴与电子的复合概率。此外,已使用密度泛函理论(DFT)进行了模拟并证明了GO的UVO还原并因此提高了还原GO(r-GO)的电导率。同时,经过15分钟UVO处理的OSC器件显示PCE严重降低,降至2.11%,这可能归因于各种因素,例如化学键的分解,串联电阻的显着增加以及光伏性能参数的明显下降。

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  • 来源
    《Organic Electronics》 |2019年第3期|32-42|共11页
  • 作者单位

    Swansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA1 8EN, W Glam, Wales;

    Univ Malaya, Fac Sci, Low Dimens Mat Res Ctr, Dept Phys, Kuala Lumpur 50603, Malaysia|Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Malaysia;

    Univ Malaya, Fac Sci, Low Dimens Mat Res Ctr, Dept Phys, Kuala Lumpur 50603, Malaysia|Jalan Univ, Int Inst Adv Islamic Studies IAIS Malaysia, Jalan Ilmu Off, Kuala Lumpur 59100, Malaysia;

    Swansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA1 8EN, W Glam, Wales;

    Univ Malaya, Fac Sci, Low Dimens Mat Res Ctr, Dept Phys, Kuala Lumpur 50603, Malaysia;

    Univ Teknol Malaysia, Adv Membrane Technol Res Ctr, Utm Johor Bahru 81310, Johor, Malaysia;

    Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 O Okayama, Tokyo 1528552, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    UV-Ozone; Reduced graphene oxide; GO/PEDOT:PSS hole transport layer; DFT simulation of GO;

    机译:UV-臭氧;还原氧化石墨烯;GO / PEDOT:PSS空穴传输层;GO的DFT模拟;

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