Dilute nitride has telecom ambition

摘要

Optimized rapid thermal annealing is the secret behind a new continuous-wave (CW) GalnNAs laser that emits at 1.5 μm in sin-glemode, and at room temperature. The laser's developers, who work at the University of Wuerz-burg in Germany and spin-off company Nanoplus, claim that the dilute nitride emitters can now target commercial 1.55 μm telecom applications currently served by singlemode InP-based lasers (Elec. Lett. 44 737).