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Photoluminescence and field emission properties of ZnS:Mn nanoparticles synthesized by rf-magnetron sputtering technique

机译:射频磁控溅射合成ZnS:Mn纳米颗粒的光致发光和场发射特性

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摘要

Nanoparticles of ZnS:Mn have been grown by radio frequency magnetron sputtering technique on glass and Si substrates at a substrate temperature 300 K. X-ray diffraction patterns and selected area electron diffraction patterns confirmed the nanocrystalline cubic ZnS phase formation. TEM micrographs of the films revealed the manifestation of ZnS:Mn nanoparticles with an average size ~6 nm. UV-Vis-NIR spectrophotometric measurement showed that the films are highly transparent (~90%) in the wavelength range 400-2600 nm. From the measurements of transmittance spectra of the films the direct allowed bandgap values have been calculated and they lie in the range 3.89-4.12 eV. The bandgap decreased with the increase of Mn concentration in the films. The Mn concentrations in the films have been varied from 0% to 8.9% and was measured by energy dispersive X-ray analysis. The photoluminescence of the Mn doped ZnS nanoparticles was measured. The intensity of the PL peaks at first increased with the increase of Mn concentration in the films up to 3.8% of Mn doping and at a Mn concentration higher than this, the intensity of PL peak decreased. Nanocrystalline ZnS:Mn showed good field emission property with a turn on field lying in the range 5.26-6.78 V/μm for a variation of anode to sample distance from 60 μm to 100 μm.
机译:ZnS:Mn纳米粒子已通过射频磁控溅射技术在衬底温度为300 K的玻璃和Si衬底上生长。X射线衍射图和选定区域电子衍射图证实了纳米晶立方ZnS相的形成。薄膜的TEM显微照片显示了ZnS:Mn纳米粒子的表现,平均粒径约为6 nm。 UV-Vis-NIR分光光度法测量表明,该膜在400-2600 nm的波长范围内具有很高的透明度(〜90%)。从膜的透射光谱的测量值,已经计算出直接允许的带隙值,它们在3.89-4.12eV的范围内。带隙随薄膜中锰浓度的增加而减小。膜中的锰浓度在0%至8.9%之间变化,并通过能量色散X射线分析测量。测量了Mn掺杂的ZnS纳米颗粒的光致发光。最初,随着膜中锰浓度的增加,PL峰的强度增加,直至Mn掺杂量达到3.8%,而当Mn浓度高时,PL峰的强度下降。纳米晶态ZnS:Mn表现出良好的场发射特性,对于阳极到样品的距离从60μm到100μm的变化,其开启场在5.26-6.78 V /μm的范围内。

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