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机译:(60)〜Coγ或MeV电子辐照下具有表面缺陷区的GaN中Pt原子的环境温度扩散和吸杂
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, Guangzhou 510631, People's Republic of China;
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, Guangzhou 510631, People's Republic of China;
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Wuxi ELPONT Radiation Technology CO., LTD, Wuxi 214151, People's Republic of China;
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People"s Republic of China;
Ambient-temperature diffusion and gettering of Pt atoms in GaN; Surface defect region; (60)~Co gamma irradiation; MeV electron irradiation;
机译:MeV电子辐照在硅中室温扩散和吸收Au
机译:1 MeV电子束辐照的GaN中与位错相关的缺陷态
机译:载体寿命〜(60)COγ和1MEV电子照射锡型CZOCHRALSKI硅:改善辐射硬度的条件
机译:一次敲除原子对1 MeV电子,25 MeV C离子和40 MeV Si离子辐照的N型4H-SiC电导率补偿的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:空位缺陷对GaN(0001)表面特征和Cs吸附的影响
机译:C60分子中的缺陷形成,电子和γ射线照射下的辐射
机译:40 mev电子辐照硅中红外缺陷吸收带的退火