Impact of infrared radiation on track etching parameters of Lexan track detector to fission fragments from 252Cf source

摘要

In this research work, the impact of infrared (IR) radiation on the etching parameters like bulk etch rate V_B, track etch rate V_T, Sensitivity S, Critical angle of etching θ_C and track registration efficiency η of Lexan track detector, irradiated to fission fragments from 252Cf source, were investigated. The changes in etching parameters due to infrared radiation for 0,12 and 24 h at different temperatures (328-348 K) are discussed based on chain scission and cross-linking mechanisms. Bulk and track etch rates increase with infrared radiation in case of post-exposed as compared to un-exposed while sensitivity slightly decreases for 12 h exposure with infrared radiation but slightly increases for 24 h exposure with infrared radiation as compared to un-exposed. On the other hand, bulk and track etch rates decrease with infrared radiation in case of pre-exposed as compared to un-exposed while sensitivity slightly increases. Critical angles increase and track registration efficiency decreases with etching temperatures. Activation energies for bulk and track etching rates have been determined by fitting Arrhenius equation to the experimental data of bulk and track etch rates which show a decrease in bulk activation energies in case of post-exposed but slightly increase in case of pre-exposed as compared to un-exposed Lexan track detectors. Track activation energies show the same trend as for bulk etch rate.