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机译:快速重离子辐照的AlGaN / GaN HEMT中的降解:潜迹的作用
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China|UCAS, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;
PINSTECH, Nanomat Res Grp, Phys Div, Islamabad 45650, Pakistan;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China|UCAS, Beijing 100049, Peoples R China;
Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Shaanxi, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China|UCAS, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;
Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China;
GaN; HEMT; Swift heavy ion; Latent track; Electrical characteristics;
机译:Swift Hearing Ions辐照的AlGaN / GaN Hemts中的降解
机译:快速重离子辐照下GaN中潜在轨道的形成引起的光学带隙和应力变化
机译:5 MeV质子辐照的常关p-AlGaN栅极AlGaN / GaN HEMT的降解特性
机译:质子辐射下蓝宝石,Si和SiC衬底上AlGaN / GaN HEMT的降解机理
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:2 MeV质子辐照的AlGaN / GaN HEMT的降解机理