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Characterization of a silicon photo-multiplier array with summing board as a photo-multiplier tube replacement in organic scintillator assemblies

机译:带有求和板的硅光电倍增管阵列的特性,可替代有机闪烁体组件中的光电倍增管

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We report on the energy, timing, and pulse-shape discrimination performance of cylindrical 5.08 cm diameter × 5.08 cm thick and 7.62 cm diameter × 7.62 cm thick trans-stilbene crystals read out with the passively summed output of three different commercial silicon photo-multiplier arrays. Our results indicate that using the summed output of an 8 × 8 array of SiPMs provides performance competitive with photo-multiplier tubes for many neutron imaging and correlated particle measurements. For a 5.08 cm diameter × 5.08 cm thick crystal read out with SensL's ArrayJ-60035_64P-PCB, which had the best overall properties, we measure the energy resolution as 17.8 ± 0.8% at 341 keVee (σ-/E), the timing resolution in the 180-400 keVee range as 236 ± 61 ps (σ), and the pulse-shape discrimination figure-of-merit as 2.21 ± 0.03 in the 230-260 keVee energy range. For a 7.62 cm diameter × 7.62 cm thick crystal read out with SensL's ArrayJ-60035_64P-PCB, we measure the energy resolution as 21.9 ± 2.3% at 341 keVee, the timing resolution in the 180-400 keVee range as 518 ± 42 ps, and the pulse-shape discrimination figure-of-merit as 1.49 ± 0.01 in the 230-260 keVee energy range. These results enable many scintillator-based instruments to enjoy the size, robustness, and power benefits of silicon photo-multiplier arrays as replacement for the photo-multiplier tubes that are predominantly used today.
机译:我们报告了以三种不同的商用硅光电倍增器的被动求和输出读出的,直径为5.08 cm×直径5.08 cm×直径7.62 cm×直径7.62 cm的圆柱形反二苯乙烯晶体的能量,定时和脉冲形状识别性能数组。我们的结果表明,使用8×8的SiPM阵列的求和输出可提供与光电倍增管相当的性能,可用于许多中子成像和相关的粒子测量。对于使用最佳性能的SensL的ArrayJ-60035_64P-PCB读出的直径为5.08 cm×5.08 cm厚的晶体,我们在341 keVee(σ-/ E)下测得的能量分辨率为17.8±0.8%,时序分辨率在180-400 keVee能量范围内为236±61 ps(σ),而在230-260 keVee能量范围内脉冲形状判别的品质因数为2.21±0.03。对于使用SensL的ArrayJ-60035_64P-PCB读出的7.62厘米直径×7.62厘米厚的晶体,我们在341 keVee上测得的能量分辨率为21.9±2.3%,在180-400 keVee范围内的定时分辨率为518±42 ps,在230-260 keVee能量范围内,脉冲形状判别品质因数为1.49±0.01。这些结果使许多基于闪烁体的仪器都能享受到硅光电倍增管阵列的尺寸,坚固性和功耗优势,从而取代了当今主要使用的光电倍增管。

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