A method of optical monitoring that can be used in the technology of manufacturing magnetoresis-tive spin tunneling junctions is proposed that is based on measuring reflection coefficients from thin films or layered structures at various stages of the manufacturing process. It is demonstrated that this method is very efficient for measuring values of the metal layer thickness ranging from several units to several tens of nanometers. The applicability of this method for control over the thickness of a thin aluminum layer oxidized in the process of formation of the barrier layer in spin tunneling structures is also shown.
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