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首页> 外文期刊>Journal of Communications Technology and Electronics >The Effect of Nonmagnetic-Impurity Doping on the Curie Temperature and Magnetotransport Properties of Ga_(1-x)Mn_xAs
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The Effect of Nonmagnetic-Impurity Doping on the Curie Temperature and Magnetotransport Properties of Ga_(1-x)Mn_xAs

机译:非磁性杂质掺杂对Ga_(1-x)Mn_xAs居里温度和磁输运性质的影响

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摘要

The effect of additional doping by nonmagnetic acceptor (Be) and donor (Te) impurities on the Curie temperature and anomalous Hall effect in Ga_(1-x)Mn_xAs is studied. As the Be concentration increases, the Curie temperature grows for Ga_(1-x)Mn_xAs with a comparatively low concentration of Mn (x - 0.03) and strongly decreases in the material with higher concentration of Mn x = 0.05. It is shown that the temperature dependence of the zero-magnetic-field resistivity (including the peak observed near the Curie temperature) can be adequately described by the magnetic- impurity scattering model. The additional doping with the donor (Te) impurity lowers the Curie temperature and enhances the anomalous Hall resistivity. As the Te concentration increases, the long-range ferromagnetic order in Ga_(1-x)Mn_xAs (x = 0.085) disappears and the paramagnet-spin glass transition is observed instead.
机译:研究了Ga_(1-x)Mn_xAs中非磁性受主(Be)和施主(Te)杂质的额外掺杂对居里温度和霍尔效应的影响。随着Be浓度的增加,具有相对较低的Mn(x-0.03)的Ga_(1-x)Mn_xAs的居里温度升高,并且在Mn x = 0.05的较高浓度的材料中居里温度急剧下降。结果表明,零磁场电阻率的温度依赖性(包括居里温度附近的峰值)可以通过磁杂质散射模型充分描述。施主(Te)杂质的额外掺杂降低了居里温度并增强了霍尔电阻的反常性。随着Te浓度的增加,Ga_(1-x)Mn_xAs(x = 0.085)中的远距离铁磁序消失,而观察到顺磁自旋玻璃化转变。

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