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Patterning organic single-crystal transistor arrays

机译:图案化有机单晶晶体管阵列

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Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials. Their outstanding device performance, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals-a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source-drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO_2 surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm~2 V~(-1)s~(-1) and on/off ratios greater than 10~7, and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.
机译:由有机单晶制成的场效应晶体管是研究有机半导体材料的电荷传输特性的理想选择。与有机薄膜制成的晶体管相比,它们出色的器件性能使其也成为诸如有源矩阵显示器和传感器阵列等电子应用的有吸引力的候选者。这些应用要求相邻设备之间的串扰最小。在薄膜系统的情况下,有源半导体层的简单构图可将串扰降到最低。但是,当使用有机单晶时,当前唯一可用于创建独立器件阵列的方法是手动选择和放置单个晶体-这种工艺禁止以高密度和合理的产量生产器件。相反,无机晶体已经以扩展的阵列生长,并且已经报道了用于电子应用的具有高迁移率的硅晶岛的高效且大面积制造。在这里,我们描述了一种将各种有机半导体材料的单晶大阵列直接有效地直接制造到晶体管源漏电极上的方法。我们发现十八烷基三乙氧基硅烷微接触印刷在干净的Si / SiO_2表面或柔性塑料上的膜域提供了对气相生长有机单晶成核的控制。这使我们能够制造大型的高性能有机单晶场效应晶体管,其迁移率高达2.4 cm〜2 V〜(-1)s〜(-1),开/关比大于10〜7以及柔性基板上的设备,这些设备在明显弯曲后仍保持其性能。这些结果表明,我们的制造方法构成了一个有希望的步骤,最终可能使我们能够将高性能有机单晶场效应晶体管用于大面积电子应用。

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