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机译:激光曝光下ALGAN / GAN单片微波集成电路(MMIC)低噪声放大器的噪声性能
Univ Messina Dept Engn I-98166 Messina Italy;
Univ Messina Dept Engn I-98166 Messina Italy;
Univ Messina Sci Fis & Sci Terra Dipartimento Sci Matemat & Informat I-98166 Messina Italy;
Univ Messina Sci Fis & Sci Terra Dipartimento Sci Matemat & Informat I-98166 Messina Italy;
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; MMIC power amplifiers; low noise amplifiers; noise performance; laser exposure; blue-ray laser beam; tested amplifier; noise figure; monolithic microwave integrated circuit low-noise amplifier; MMIC; X-band low-noise amplifier; high electron mobility transistor; optical illumination; light exposure; transistor pinch-off point; wavelength 404; 0 nm; AlGaN-GaN;
机译:用于低噪声厘米波放大器的单片集成电路在AlGaN / ALN / GAN / SIC异质结构上
机译:从模型到低噪声放大器单片微波集成电路:0.03-2.6 GHz塑料四扁平无铅包装镓 - 氮化物低噪声放大器单片微波集成电路
机译:具有铜金属化正面的低噪声放大器的微波砷化镓单片集成电路的设计-处理特征
机译:氮化镓整体微波集成电路(GaN MMICS)的性能和应用
机译:混合高临界转变温度超导体滤波器/低噪声放大器微波集成电路。
机译:0.1μmAlGaN / GaN高电子迁移率晶体管(HEMT)工艺的改进大信号模型及其在W波段实用单片微波集成电路(MMIC)设计中的应用
机译:氮化镓单片微波集成电路(GaN mmIC)的性能和应用
机译:单片微波集成电路(mmIC)宽带功率放大器(第2部分)。