Full duplex reflection amplifier tag

摘要

The authors describe a reflection amplifier adapted to have both a reflection and a transmission port. The amplifier uses a single silicon bipolar transistor and demonstrates a reflection gain of 13 dB, transmission gain of 10 dB and 3.4 dB noise figure at 5.25 GHz. The added feature of transmission gain in the reflection amplifier permits practical implementation of full duplex microwave radiofrequency indentification (RFID) tag operation. By using a simple subcarrier modulation scheme full duplex RFID operation utilising this amplifier is demonstrated. These results indicate that for 27 dBm (0.5 W) effective isotropic radiated power (EIRP) transmit power it should be possible to obtain approximately 8 m downlink range and 25 m uplink range.