机译:硅衬底边缘和拐角附近的硅通孔的导纳提取和分析
Nanjing University of Science and Technology, People's Republic of China;
Nanjing Normal University, People's Republic of China;
Nanjing University of Science and Technology, People's Republic of China;
Nanjing University of Science and Technology, People's Republic of China;
Nanjing Normal University, People's Republic of China;
three-dimensional integrated circuits; electric admittance; elemental semiconductors; integrated circuit design; method of moments; silicon;
机译:浮动硅衬底中硅通孔的瞬态分析
机译:浮动硅衬底中硅通孔的分析电容模型
机译:同轴硅-绝缘体-硅直通硅通孔的电学特性:理论分析和实验
机译:快速提取硅通孔的高频平行导纳及其到有源区的电容耦合噪声
机译:硅基和金属基体上铂原子层沉积的原位表面敏感性分析
机译:广泛分析沉积Al2O3在N型硅衬底上的沉积退火的影响
机译:使用边缘和角落光刻的硅纳米线制造