Study of RF N~- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed Rf

摘要

An innovative reliability test bench dedicated to RF power devices is currently implemented. This bench allows to apply both electric and thermal stress for lifetime test under radar pulsed RF conditions. This paper presents the first investigation findings of critical electrical parameter degradations after thermal and electrical ageing. It shows that the tracking of a set of parameters (drain-source current, on-state resistance, threshold voltage, feedback capacitance and transconductance) can give insight into the hot carrier injection phenomenon for a RF n~- channel lateral DMOS (N~- LDMOS) working under pulsed conditions.