Defect Localization using Voltage Contrast I_DDQ Testing

摘要

I_DDQ testing detects a majority of faults occurring in logic. ICs. Nethertheless, it has not eliminated the complex task of fault isolation at the silicon level of ICs. Liquid Crystal or Emission Microscopy can deal with this challenge. Unfortunately these two techniues lack sensitivity for some defects when the abnormal current consumption (I_DDQ) remains weak. On the other hand we can use very powerful toos like the electories, pepole have underlined the interest of merging the two techniques (I_DDQ testing and Voltage Contrast) to get fast and accurate defect localization. In this paper, we will move on to the next step of identifying practical key issues necessary for obtaining results on current VLSI.