Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

摘要

Leakage current evolution during two different modes of electrical stressing in hydrogenated-undoped n-channel polysilicon thin film transistors (TFTs) is studied in this work. On-state bias stress (high drain bias and positive gate bias) and off-state bias stress (high drain bias and negatve gate bias) were performed in order to study the degradation of the leakage current. It is found that during off-state bias stress the gate oxide is more severely damaged than the SiO_2-polySi interface. In contrast, during on-state bias stress, two different degradation mechanisms were detected which are analyzed.