Defect generation in ultra-thin SiO_2 gate layers and SiO_2/ZrO_2 gate stacks and the dispersive transport model

摘要

The generation of defects in ultra-thin SiO_2 gate layers and SiO_2/ZrO_2 gate stacks is studied through the time-dependent current density variation △J_G=J_G-J_G(0) observed during constant gate voltage stress of MOS capacitors. The time dependence of the defect density variation △N_ot is calculated within a dispersive transport model, assuming that these defects are produced during the random hopping transport of positively charged species in the insulating layer.