Epitaxial growth of Dy_2O_3 thin films on epitaxial Dy-germanide films on Ge(0 0 1) substrates

摘要

Ultra-thin films of Dy are grown on Ge(0 0 1) substrates by molecular beam deposition near room temperature and immediately annealed for solid phase epitaxy at higher temperatures, leading to the formation of DyGe_x films. Thin films of Dy_2O_3 are grown on the DyCe_x film on Ge(0 0 1) substrates by molecular beam epitaxy. Streaky reflection high energy electron diffraction (RHEED) patterns reveal that epitaxial DyGe_x films grow on Ge(0 0 1) substrates with fiat surfaces. X-ray diffraction (XRD) spectrum suggests the growth of an orthorhombic phase of DyGe_x films with (0 01) orientations. After the growth of Dy_2O_3 films, there is a change in RHEED patterns to spotty features, revealing the growth of 3D crystalline islands. XRD spectrum shows the presence of a cubic phase with (10 0) and (111) orientations. Atomic force microscopy image shows that the surface morphology of Dy_2O_3 films is smooth with a root mean square roughness of 10 A.