机译:利用器件仿真研究影响4H-SiC结势垒肖特基二极管反向漏电流的堆叠故障
Tokyo Institute of Technology, 2-12-1 NE-18 Ookayama, Meguro-ku, Tokyo, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo, Japan;
Tokyo Institute of Technology, 2-12-1 NE-18 Ookayama, Meguro-ku, Tokyo, Japan;
Tokyo Institute of Technology, 2-12-1 NE-18 Ookayama, Meguro-ku, Tokyo, Japan;
Tokyo Institute of Technology, 2-12-1 NE-18 Ookayama, Meguro-ku, Tokyo, Japan;
JBS; characterization; leakage current; simulation;
机译:三角形缺陷中的堆叠缺陷对4H-SiC结势垒肖特基二极管的影响
机译:堆叠故障:卤化物气相外延(001)β-GA_2O_3肖特基势垒二极管漏电流的起源
机译:4H-SiC肖特基势垒二极管反向漏电流的传导机理
机译:用装置仿真研究影响4H-SIC结障舒丝二极管反向漏电流的堆垛机故障
机译:4H碳化硅中的单片集成功率JFET和结势垒肖特基二极管。
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:4H-SiC(0001)外延层中向内生长的堆叠缺陷的表征及其对高压肖特基势垒二极管的影响