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首页> 外文期刊>Materials Research Innovations >Properties of mullite-bonded SiC ceramics from mullite precursor sol coated SiC powder and crystallization kinetics of mullite formation
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Properties of mullite-bonded SiC ceramics from mullite precursor sol coated SiC powder and crystallization kinetics of mullite formation

机译:莫来石前体溶胶涂覆的SiC粉与莫来石结合的SiC陶瓷的性能及形成莫来石的动力学

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摘要

Mullite bonded -bonded porous silicon carbide (SiC) ceramics were fabricated by sintering sol–gelmullite-coated SiC particles. The coated powder was characterized by measuring zeta potentialat different pH, X-ray photoelectron spectroscopy (XPS), XRD analysis and thermal analysis. Thethermal oxidation behaviour of coated SiC powder was examined by thermogravimetry (TG)-Differential thermal analysis (DTA) technique in dry air. Mullite formation exhibited two exothermicpeaks; the first 1195–1213°C and the second at 1319–1358℃. The activation energy for mullitecrystallization in the first step ranged from 884 to 1250 KJ mole− 1 and in second step it rangedfrom 759 to 1018 KJ mole− 1. Characterization of resulting SiC ceramics were done by XRD, SEM,TEM, EDS, porosity, pore size distribution analysis and measurement of mechanical strength.The ceramics with porosity ∼42 vol.-% exhibited flexural strength of ∼23 Mpa. Microstructureobservations revealed that neighbouring SiC particles were bonded by well-developed neckconsisting of needle-shaped mullite grown in a siliceous matrix.
机译:莫来石键合键合多孔碳化硅(SiC)陶瓷是通过烧结溶胶-凝胶覆盖的SiC颗粒制成的。通过在不同pH下测量ζ电位,X射线光电子能谱(XPS),XRD分析和热分析来表征涂覆的粉末。通过热重法(TG)-差热分析(​​DTA)技术在干燥的空气中检查了涂覆的SiC粉的热氧化行为。莫来石形成具有两个放热峰。第一次在1195–1213°C,第二次在1319–1358℃。第一步莫来石结晶的活化能在884至1250 KJ摩尔-1范围内,第二步在759至1018 KJ摩尔-1范围内。通过XRD,SEM,TEM,EDS,孔隙率,孔隙度约为42 vol .-%的陶瓷的抗弯强度约为23 Mpa。显微组织观察表明,邻近的SiC颗粒是由硅质基质中生长的针状莫来石形成的发达的颈部结合而成的。

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