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Dielectric and photocatalytic properties of sulfur doped TiO_2 nanoparticles prepared by ball milling

机译:球磨制备的硫掺杂TiO_2纳米粒子的介电和光催化性能

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摘要

Sulfur (S) doped commercial TiO_2 P-25 has been achieved by changing the amount of thiourea using ball milling technique. The results of XRD clearly reveal biphasial anatase and rutile mixtures for all prepared samples and doping of S does not change the morphology of the TiO_2. The optical absorption edge of S-doped TiO_2 was red shifted with indirect bandgap energy of 2.8 eV. The dielectric studies confirm that the dielectric constant of TiO_2 increases after doping, however it becomes more conductive. Newly designed S-doped TiO_2 photocatalysts exhibited excellent photocatalytic performance for the degradation of methylene blue (MB) under visible light. The overall photocatalytic activity of 0.11 at.% S-doped TiO_2 was significantly 3-times higher than that of commercial TiO_2 P-25 and complete degradation of MB has taken place after 90 min of irradiation under visible light while only 35% dye degraded when the reaction has been carried out in the presence of undoped TiO_2.
机译:通过使用球磨技术改变硫脲的量,已经实现了硫(S)掺杂的市售TiO_2 P-25的合成。 XRD的结果清楚地表明所有制备样品的双相锐钛矿和金红石混合物,并且S的掺杂不会改变TiO_2的形态。 S掺杂的TiO_2的光吸收边缘发生了红移,间接带隙能量为2.8 eV。介电研究证实,掺杂后TiO_2的介电常数增加,但是它变得更具导电性。新设计的S掺杂TiO_2光催化剂在可见光下对亚甲基蓝(MB)的降解表现出优异的光催化性能。 0.11 at。%S掺杂的TiO_2的总体光催化活性比市售TiO_2 P-25的光催化活性高3倍,并且在可见光照射90分钟后MB发生了完全降解,而当染料降解时只有35%的染料降解反应是在未掺杂的TiO_2存在下进行的。

著录项

  • 来源
    《Materials Research Bulletin》 |2013年第9期|3351-3356|共6页
  • 作者单位

    Promising Centre for Sensors and Electronic Devices (PCSED), Advanced Materials and Nano-Research Centre, Najran University, P.O. Box 1988, Najran,11001, Saudi Arabia,Electrical Engineering Department, College of Engineering, Najran University, P.O. Box 1988, Najran, 11001, Saudi Arabia;

    Promising Centre for Sensors and Electronic Devices (PCSED), Advanced Materials and Nano-Research Centre, Najran University, P.O. Box 1988, Najran,11001, Saudi Arabia;

    Promising Centre for Sensors and Electronic Devices (PCSED), Advanced Materials and Nano-Research Centre, Najran University, P.O. Box 1988, Najran,11001, Saudi Arabia,Department of Physics, Faculty of Sciences and Arts, Najran University, P.O. Box 1988, Najran, 11001, Saudi Arabia;

    Promising Centre for Sensors and Electronic Devices (PCSED), Advanced Materials and Nano-Research Centre, Najran University, P.O. Box 1988, Najran,11001, Saudi Arabia,Nanostructured & Nanotechnology Materials Division, Central Metallurgical R&D Institute, CMRD1, P.O. Box 87, Helwan, 11421, Cairo, Egypt,Chemistry Department, Science and Art at Sharurah, Najran University, Saudi Arabia;

    Promising Centre for Sensors and Electronic Devices (PCSED), Advanced Materials and Nano-Research Centre, Najran University, P.O. Box 1988, Najran,11001, Saudi Arabia,Chemistry Department, Science and Art at Sharurah, Najran University, Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A. Inorganic compounds; A. Oxides; B. Intercalation reactions; D. Optical properties;

    机译:A.无机化合物;A。氧化物;B.插层反应;D.光学性质;

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