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首页> 外文期刊>Materials Letters >Silicon micromachining processes combined with thick-film printed lead zirconate titanate actuators for microelectromechanical systems
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Silicon micromachining processes combined with thick-film printed lead zirconate titanate actuators for microelectromechanical systems

机译:硅微机械加工工艺与厚膜印刷锆钛酸铅钛酸盐致动器相结合,用于微机电系统

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摘要

Thick-film printed lead zirconate titanate (PZT) structures cab be combined with micromachined silicon structures and offer relatively large actuation forces as compared to alternative techniques. This letter describes the initial investigation into the compatibility issues of micromachining silicon wafers with PZT layers printed on the surface. Many standard micromachining etching processes have been carried out on a range of silicon substrates incorporating platinum electrode/thick-film PZT structures. Wet etches were found to be unsuitable since they attacked the adhesion of the bottom electrode to the substrate. Plasma etching processes do not appear to attack the PZT, although in the case of the CHF_3+ArSiO_2 etch, there is drop in the measured dielectric which could reduce the d_33 coefficient of the film. Other than this, plasma process can be used for the micromachining of the silicon substrate after thick-film processing, greatly expanding the range of applications suited to this combination of technologies.
机译:厚膜印刷锆钛酸铅钛酸盐(PZT)结构可与微机械硅结构结合,与替代技术相比,可提供较大的驱动力。这封信描述了对在表面上印刷有PZT层的微加工硅晶片的兼容性问题的初步研究。在一系列结合了铂电极/厚膜PZT结构的硅基板上已经执行了许多标准的微加工蚀刻工艺。发现湿蚀刻是不合适的,因为它们侵蚀了底部电极对基底的粘附。尽管在CHF_3 + ArSiO_2蚀刻的情况下,等离子蚀刻工艺似乎不会侵蚀PZT,但被测介电质会下降,这可能会降低薄膜的d_33系数。除此之外,等离子工艺可用于厚膜加工后的硅基板的微加工,从而大大扩展了适用于这种技术组合的应用范围。

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