Study on the growth, etch morphology and spectra of Y_2SiO_5 crystal

摘要

Undoped Y_2SiO_5 single crystal was grown by the Czochralski method. The samples were optically polished after orienting and cutting. The rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. The absorption spectra were measured before and after H_2 annealing or air annealing. The absorption edge of Y_2SiO_5 crystal was determined to be about 202 nm. The absorption coefficient of Y_2SiO_5 crystal decreased after H_2 annealing and obviously increased after air annealing.