首页> 外文期刊>Materials Letters >Formation of rod-crystals on CuInSe_2 thin films by SILAR method using CH_3-(CH_2)_(11)-C_6H_4-SO_3Na surfactant
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Formation of rod-crystals on CuInSe_2 thin films by SILAR method using CH_3-(CH_2)_(11)-C_6H_4-SO_3Na surfactant

机译:使用CH_3-(CH_2)_(11)-C_6H_4-SO_3Na表面活性剂通过SILAR方法在CuInSe_2薄膜上形成棒状晶体

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摘要

The formation of rod-crystals was observed on CuInSe_2 thin films prepared by successive ionic layer adsorption and reaction (SILAR) method using sodium dodecylbenzene sulfonate (SDBS) as directing agent. Rod-crystals appeared on the surface of CulnSe_2 thin film when adding SDBS into cationic precursor solution. FESEM, EDS, XRD and HRTEM were used to characterize the rod-crystals. The length of rod-crystals has a proportional relationship with SDBS amounts in the given scope of 0.001-0.01 mol/L. The stoichiometry of rod was close to 1:1:2 of CuInSe_2, and rod growth of partially preferential orientation along [112] was observed. The growth of rod could be explained by steric hindrance effects of SDBS adsorbed on the inorganic deposit surface.
机译:在以十二烷基苯磺酸钠(SDBS)为导向剂的连续离子层吸附和反应(SILAR)方法制备的CuInSe_2薄膜上观察到棒状晶体的形成。在阳离子前驱体溶液中加入SDBS后,CuInSe_2薄膜表面出现棒状晶体。用FESEM,EDS,XRD和HRTEM表征棒状晶体。在给定的0.001-0.01 mol / L范围内,棒状晶体的长度与SDBS量成比例关系。棒的化学计量比接近CuInSe_2的1:1:2,并且观察到棒的生长沿[112]部分偏向。棒的生长可以用吸附在无机沉积物表面的SDBS的位阻效应来解释。

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