机译:通过几乎平衡的氢蚀刻获得的SiC(000(1)over-bar)表面上的高迁移率和大畴解耦外延石墨烯
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
State Grid Shandong Elect Power Res Inst, Jinan 250001, Peoples R China;
State Grid Shandong Elect Power Res Inst, Jinan 250001, Peoples R China;
Carbon materials; Hydrogen etching; Epitaxial growth; Raman;
机译:SiC(0001)和SiC(000(1)上方)上的外延石墨烯:从表面重建到碳电子学
机译:使用扫描探针显微镜鉴定和表征部分石墨化的SiC(0001)表面上的外延石墨烯域
机译:通过氢气蚀刻3C-SiC(111)薄膜在Si(111)上的高质量外延石墨烯
机译:6H-SiC(000-1)表面上的层状外延石墨烯的电子和结构性质
机译:使用氮化铝镓/氮化镓高电子迁移率晶体管检测化学物质和生物材料,并通过外延石墨烯检测氢
机译:氢气下生长后退火在4H-SiC(0001)上外延石墨烯中的高电子迁移率
机译:外延石墨烯在4H-siC(0001)上的高电子迁移率 在氢气下进行后生长退火