Realization of C-60 whiskers incorporated chalcopyrite CuIn_xGa_(1-x)Se_2 in Cu_2Se/C-60/In_3Se_2/C-60/Ga_2Se_3 multilayer structures

摘要

The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 degrees C to 350 degrees C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (= 10(5) cm(-1)). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 degrees C) film. (C) 2020 Elsevier B.V. All rights reserved.