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Highly c-Axis Oriented ZnO Thin Films Grown by Sol-Gel Method for SAW Sensor Application

机译:溶胶-凝胶法生长的高c轴取向ZnO薄膜在声表面波传感器中的应用

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摘要

Highly transparent and c-axis oriented ZnO thin films were fabricated by sol gel spin coating method on quartz and Si(100) substrates. The influence of substrates on optical, structural and surface morphological properties has been carried out. The X-ray diffraction patterns reveal that the growth of ZnO thin films along c-axis with crystallite size in the range of 22-33 nm. High percentage transmittance ~90% was observed in the visible region of solar spectrum and optical band gap of thin film estimated to be 3.29 eV. The photoluminescence spectra showed that ZnO thin film fabricated on Si(100) has high intense UV emission peak compared to the film deposited on quartz. The structural property of thin films has been further investigated by Raman spectroscopy. The Raman spectra of thin films showed the crystalline structure with the high intense peak centered at 439 cm~(-1) on both the substrates.
机译:通过溶胶凝胶旋涂法在石英和Si(100)衬底上制备了高度透明和c轴取向的ZnO薄膜。已经进行了基材对光学,结构和表面形态性能的影响。 X射线衍射图表明,ZnO薄膜沿c轴生长,晶粒尺寸在22-33nm之间。在太阳光谱的可见区域和薄膜的光学带隙估计为3.29 eV,观察到较高的透射率〜90%。光致发光光谱表明,与沉积在石英上的薄膜相比,在Si(100)上制造的ZnO薄膜具有较高的强烈UV发射峰。薄膜的结构性能已通过拉曼光谱进一步研究。薄膜的拉曼光谱显示出晶体结构,在两个基板上都具有以439 cm〜(-1)为中心的高强度峰。

著录项

  • 来源
    《Materials Focus》 |2014年第1期|55-59|共5页
  • 作者单位

    Laser Spectroscopy Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;

    Laser Spectroscopy Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;

    Laser Spectroscopy Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; Optical Properties; FESEM; Photoluminescence; Raman Spectroscopy;

    机译:氧化锌;光学性质FESEM;光致发光;拉曼光谱;

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