Hydrothermal Synthesis of One Dimensional Mo Doped n-Type ZnO Nanowires on p-Type Si Substrate

摘要

The low temperature hydrothermal synthesis of undoped and doped n-type ZnO nanowires on p~+ silicon substrate with seed layer was studied. The products were characterized by field emission scanning electron microscopy (FESEM) integrated with energy-dispersive X-ray spectroscopy (EDS) facility, photoluminescence spectroscopy (PL) and electrical source measurement techniques. The FESEM and EDS studies revealed vertical aligned ZnO nanowires with hexagonal morphology having equimolar concentration of Zn and O with Mo Dopant. The band edge emission of Mo doped ZnO exhibited red-shift as compared to undoped ZnO NWs. The Ⅰ-Ⅴ curves of resulting n-ZnO NWs/p~+-Si heterostructure exhibit p-n junction diode characteristics. The present study may be projected as useful in developing enhanced electrical characteristics by optimizing the density and quality of ZnO NWs.