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Measurement of Thermally Stimulated Currents and Estimation of Trapping Parameters in Amorphous Se_(90)Sb_8Ag_2 Thin Films

机译:Se_(90)Sb_8Ag_2非晶薄膜的热激电流测量和俘获参数估计

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摘要

Thermally stimulated currents (TSC) have been measured at different heating rates in a-Se_(90)Sb_8Ag_2 thin films prepared by vacuum evaporation. A TSC peak occurs at a particular temperature that shifts towards higher temperature as heating rates is increased. Trap depth and trap concentration are also evaluated by various methods. The average value of trap depth (E_t) is 0.30 eV and calculated value of trap density (N_t) is 2.21 × 10~(18) cm~(-3).
机译:在通过真空蒸发制备的a-Se_(90)Sb_8Ag_2薄膜中,以不同的加热速率测量了热激发电流(TSC)。 TSC峰值出现在特定温度下,随着加热速率的增加,该温度会向较高温度移动。陷阱深度和陷阱浓度也可以通过各种方法进行评估。陷阱深度的平均值(E_t)为0.30 eV,陷阱密度的计算值(N_t)为2.21×10〜(18)cm〜(-3)。

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