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Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering

机译:r.f.法表征二硼化ha薄膜电阻器磁控溅射

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摘要

The material properties of sputtered HfB_2 thin films (≈0.1 μm) are studied to better understand their behavior when used in ink-jet printing devices. The deposition conditions (i.e., working pressure, r.f. power, and heater temperature) were found to have large effects on the resistivity and stress of the film. The resistivity results obtained for HfB_2 could mainly be attributed to the grain size effects. The stress built in during deposition was confirmed to be the primary stress component for the as-deposited heater film. In addition, the stress variation in the HfB_2 sample during the thermal cycling was investigated. Under proper sputtering conditions, the HfB_2 stress can be repeatedly controlled from tension (+ 3 X 10~9 dyne cm~(-2), 100℃) to compression (-3.5 X 10~9 dyne cm~(-2), 400℃). This trend is quite useful and can be utilized to minimize the heater stress during ink-jet device operation.
机译:研究了溅射的HfB_2薄膜(约0.1μm)的材料特性,以更好地了解其在喷墨打印设备中的性能。发现沉积条件(即工作压力,射频功率和加热器温度)对膜的电阻率和应力有很大的影响。 HfB_2的电阻率结果主要归因于晶粒尺寸效应。沉积期间建立的应力被确认为沉积的加热膜的主要应力成分。此外,研究了热循环过程中HfB_2样品中的应力变化。在适当的溅射条件下,HfB_2应力可以从张力(+ 3 X 10〜9达因厘米〜(-2),100℃)到压缩(-3.5 X 10〜9达因厘米〜(-2),400)反复控制。 ℃)。这种趋势是非常有用的,并且可以用来使喷墨设备运行期间的加热器应力最小化。

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