Electrical properties of Ta_xN_y films by implementing OES in the sputtering system

摘要

Tantalum nitride has been found to be a promising material for many applications such as diffusion barrier, wear and corrosion-resistance material, as well as precise and stable resistor in silicon-integrated circuits. In this study, the effect of the amount of tantalum ion, in the plasma, on the electrical property and crystal structure of the tantalum Nitride films was investigated. The films were deposited on silicon substrates by a d.c. magnetron sputtering system. The film thickness Was measured by an α-step profilometer. The sheet resistance was measured by a four-point probe and the X-ray diffraction patterns were Used to analyze the crystal structure of the films.