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Composition and temperature dependence of electron band structure in ZnSe_(1-x)S_x

机译:ZnSe_(1-x)S_x中电子能带结构的组成和温度依赖性

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Using the empirical pseudo-potential method combined with the improved virtual crystal approximation where compositional disorder is included as an effective potential, we report on the results of composition and temperature-dependent optical band gaps, of the ZnSe_(1-x)S_x (0 ≤ x ≤ 1) type alloys. The obtained results compare reasonably well with the available experimental data. The fundamental band gap is found to vary non-linearly with composition, showing a bowing. Similar bowing is also observed from the temperature-dependent fundamental band gap. This bowing decreases with increasing temperature over the range 0-200 K, but it increases gradually on going from 200 to 300K. The expression E_g(x, T) = 2.828 + 0.45x + 0.53x~2 + T(-3.45x~2 + 3.22x - 3.88) x 10~(-4) was obtained from the data can be used to obtain the energy gap as a function of x and T over a large range of these variables.
机译:使用经验伪势方法结合改进的虚拟晶体近似方法(其中将成分无序包括为有效电势),我们报告了ZnSe_(1-x)S_x(0的成分和随温度变化的光学带隙的结果≤x≤1)型合金。获得的结果与可用的实验数据相当合理地比较。发现基带隙随组成非线性变化,表现出弯曲。从温度相关的基带隙中也观察到类似的弯曲。当温度在0-200 K范围内升高时,弯曲度会降低,但在200至300K范围内会逐渐升高。从数据获得表达式E_g(x,T)= 2.828 + 0.45x + 0.53x〜2 + T(-3.45x〜2 + 3.22x-3.88)x 10〜(-4)在这些变量的很大范围内,能隙是x和T的函数。

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