首页> 外文期刊>JSME International Journal. Series C, Mechanical Systems, Machine Elements and Manufacturing >Evaluation of Internal Stresses in Single-, Double- and Multi-Layered TiN and TiAlN Thin Films by Synchrotron Radiation
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Evaluation of Internal Stresses in Single-, Double- and Multi-Layered TiN and TiAlN Thin Films by Synchrotron Radiation

机译:用同步辐射评估单层,双层和多层TiN和TiAlN薄膜的内部应力

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摘要

Residual stresses in TiN and TiAlN films on steel substrate were investigated by ultra high X-rays of synchrotron radiation. The specimens prepared in this study were single-, double- and multi-layer TiN and TiAlN films deposited on high speed steel substrate by arc-ion plating. The minimum thickness available for the residual stress measurement was 0.8 μm by in-lab equipment whereas below 0.1 μm by synchrotron radiation. Extremely large compressive residual stresses were found in the films. Residual stresses in TiAlN films were more than twice larger than those in TiN films, resulting to reduce the average residual stress in the whole film system by making double- or multi-layer film construction comparing to that in the single TiAlN film.
机译:通过超高X射线的同步加速器辐射研究了钢基底上的TiN和TiAlN膜中的残余应力。在这项研究中制备的样品是通过电弧离子镀在高速钢基材上沉积的单层,双层和多层TiN和TiAlN膜。实验室内设备可用于残余应力测量的最小厚度为0.8μm,而同步加速器辐射小于0.1μm。在膜中发现极大的压缩残余应力。 TiAlN膜中的残余应力比TiN膜中的残余应力大两倍以上,从而通过与单层TiAlN膜相比形成双层或多层膜结构来降低整个膜系统中的平均残余应力。

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