Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

Mitsuaki Takeuchi; Toshihiko Kojima; Atsushi Oowada; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Sigeki Sakai; Tsunenobu Kimoto

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Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

机译：气体补偿条件下气体环境中硅场发射体阵列的电子发射特性

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Electron-emission properties of silicon field-emitter arrays treated with trifluoromethane plasma (Si:C-FEA) were evaluated under H_2, CH_4, CO, CO_2, O_2, and C_2H_4 ambients. Oxidizing gases, including O_2 and CO_2, make shortened the lifetime. However,

机译：在H_2，CH_4，CO，CO_2，O_2和C_2H_4的环境下评估了用三氟甲烷等离子体（Si：C-FEA）处理的硅场致发射体阵列的电子发射性能。氧化气体（包括O_2和CO_2）缩短了使用寿命。然而，

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来源
《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2008年第2期|p.782-787|共6页
作者
Mitsuaki Takeuchi; Toshihiko Kojima; Atsushi Oowada; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Sigeki Sakai; Tsunenobu Kimoto;
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作者单位

Innovation Plaza Kyoto, Japan Science and Technology Agency, 1-30, Goryo-Ohara Nishikyo-ku, Kyoto 615-8245, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

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