Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with liquid phase deposition-TiO2 gate oxide

摘要

TiO2 films were prepared with aqueous solutions of hexafluorotitanic acid and boric acid on an InP substrate with an ammonium sulfide treatment. The films showed greatly enhanced electrical characteristics compared to those prepared without the ammonium sulfide treatment. The leakage currents of the resulting TiO2/InP capacitor reached 2.1 × 10-7 and 7.4 × 10-7 A/cm2 at ±0.5 MV/cm. The dielectric constant and the effective oxide charges were 43 and -2 × 1011 C/cm2, respectively. The interface state density was 3.6 × 1011 cm-2 eV-1. The fabricated enhancement-mode n-channel InP MOSFET exhibited good electrical characteristics with a maximum gm of 43 mS/mm and electron mobility of 348 cm2/Vs.