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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic
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Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic

机译:视场散光的光刻特征和0.3数值孔径极端紫外微场光学器件的对准稳定性

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摘要

Here we describe the lithographic characterization of the astigmatism in a 0.3-numerical aperture extreme ultraviolet (EUV) microexposure tool installed at Lawrence Berkeley National Laboratory. The lithographic results, measured across the field of view, are directly compared to EUV interferometry results obtained from the same tool at Berkeley during the optic alignment phase nearly one year prior to the lithographic characterization. The results suggest a possible long-term astigmatism drift on the order of 0.5 nm rms. Moreover, the uncertainty in the lithographic characterization is shown to be approximately 0.1 nm rms, similar to the precision previously demonstrated from EUV interferometry.
机译:在这里,我们描述了劳伦斯伯克利国家实验室安装的0.3数值孔径极紫外(EUV)微曝光工具中的像散的光刻特性。将在整个视野范围内测量的光刻结果与在进行光刻特性鉴定将近一年的光学对准阶段期间从伯克利同一工具获得的EUV干涉测量结果直接进行比较。结果表明,可能的长期散光漂移为0.5 nm rms量级。此外,光刻特征的不确定性显示为大约0.1 nm rms,类似于先前从EUV干涉仪获得的精度。

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