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首页> 外文期刊>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films >Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates
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Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates

机译:通过不同掺杂率的原子层沉积制备的纳米级氧化钇稳定的氧化锆中的离子传导

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摘要

The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ.
机译:通过改变原子层沉积(ALD)过程中的掺杂比,研究了氧化钇稳定的氧化锆(YSZ)的离子传导。氧化钇和氧化锆沉积物的ALD循环比从1:1变化到1:6,这对应于掺杂率从28.8%到4.3%。 ALD YSZ的面内电导率提高了2个数量级。发现最佳ALD掺杂率(10.4%)与块状YSZ(8%)不同。相对于块状YSZ,ALD YSZ相对于块状YSZ的掺杂率和离子传导之间的这种不同关系是由于与块状YSZ的均匀掺杂相反,在ALD YSZ膜的垂直方向上的不均匀掺杂。

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