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Excellent Semiconductors Based on Tetracenotetracene and Pentacenopentacene: From Stable Closed-Shell to Singlet Open- Shell

机译:基于四痕量痕量戊烯和并五苯并五苯的优秀半导体:从稳定的闭壳到单线态开壳

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摘要

Designing stable open-shell organic materials through the modifications of the pi-topology of molecular organic semiconductors has recently attracted considerable attention. However, their uses as an active layer in organic field-effect transistors (OFETs) are very limited, and the obtained hole and electron charge mobilities are around 10(-3) cm(2) V-1 s(-1). Herein, we disclose the synthesis of two perifused materials, so-called tetracenotetracene (TT) and pentacenopentacene (PP), which have low band gaps of 1.79 and 1.42 eV, respectively. Their ground state natures have been investigated by different experiments including steady state absorption, electron spin resonance, superconducting quantum interfering device, and variable-temperature NMR along with DFT calculations. TT and PP have closed-shell and singlet open-shell structures in their ground state, respectively, and possess high stability. Their biradical characteristics were found to be 0.50 and 0.64. The origin of the open-shell character of PP is related to the concomitant opening of two tetracenes with the recovering of two extra aromatic sextets and a small HOMO-LUMO energy gap (gap 1.5 eV). Thanks to the high stability, thin film OFET devices could be fabricated. In TG-BC configuration PP shows a remarkably high hole mobility of 1.4 cm(2) cm(2) V-1 s(-1), while TT exhibits a hole mobility of 0.77 cm(2) V-1 s(-1). In the configuration of BG-TC, ambipolar behaviors for both were obtained with hole and electron mobilities of 0.21 and 0.01 cm(2) V-1 s(-1) for PP and 0.14 and 0.006 cm(2) V-1 s(-1) for TT.
机译:通过改变分子有机半导体的π拓扑结构来设计稳定的开壳有机材料近来引起了相当大的关注。但是,它们用作有机场效应晶体管(OFET)的有源层的用途非常有限,并且获得的空穴和电子电荷迁移率约为10(-3)cm(2)V-1 s(-1)。在本文中,我们公开了两种周熔材料的合成,即所谓的四乙撑四烯(TT)和并五并五苯(PP),它们的低带隙分别为1.79和1.42 eV。它们的基态性质已经通过不同的实验进行了研究,包括稳态吸收,电子自旋共振,超导量子干涉装置,可变温度NMR和DFT计算。 TT和PP在其基态下分别具有闭壳和单线态开壳结构,并具有很高的稳定性。发现它们的双基特征为0.50和0.64。 PP开壳特性的起源与两个四面体的同时打开,两个额外芳族六重体的回收和一个小的HOMO-LUMO能隙(间隙<1.5 eV)有关。由于具有高稳定性,因此可以制造薄膜OFET器件。在TG-BC配置中,PP显示出1.4 cm(2)cm(2)V-1 s(-1)的高空穴迁移率,而TT显示出0.77 cm(2)V-1 s(-1)的空穴迁移率)。在BG-TC的配置中,PP的空穴和电子迁移率分别为0.21和0.01 cm(2)V-1 s(-1)和0.14和0.006 cm(2)V-1 s(-1)都获得了双极性行为。 -1)for TT。

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  • 来源
    《Journal of the American Chemical Society》 |2019年第23期|9373-9381|共9页
  • 作者单位

    Univ Paris Saclay, CNRS, UMR 8180, UVSQ,Inst Lavoisier Versailles, 45 Ave Etats Unis, F-78035 Versailles, France;

    Kyushu Univ, JST ERATO Adachi Mol Exciton Engn Project, Ctr Organ Photon & Elect Res OPERA, Nishi Ku, Fukuoka, Fukuoka 8190395, Japan|Kyushu Univ, Educ Ctr Global Leaders Mol Syst Devices, Nishi Ku, Fukuoka, Fukuoka 8190395, Japan;

    Univ Paris Saclay, CNRS, UMR 8180, UVSQ,Inst Lavoisier Versailles, 45 Ave Etats Unis, F-78035 Versailles, France;

    Normandie Univ, CNRS, UMR 6508, CRISMAT,ENSICAEN,UNICAEN, F-14000 Caen, France;

    Kyushu Univ, JST ERATO Adachi Mol Exciton Engn Project, Ctr Organ Photon & Elect Res OPERA, Nishi Ku, Fukuoka, Fukuoka 8190395, Japan|Kyushu Univ, Educ Ctr Global Leaders Mol Syst Devices, Nishi Ku, Fukuoka, Fukuoka 8190395, Japan|Kyushu Univ, Int Inst Carbon Neutral Energy Res WPI I2CNER, Nishi Ku, Fukuoka, Fukuoka 8190395, Japan;

    Ecole Polytech, CNRS, UMR 7647, LPICM, F-91128 Palaiseau, France;

    Univ Paris Saclay, CNRS, UMR 8180, UVSQ,Inst Lavoisier Versailles, 45 Ave Etats Unis, F-78035 Versailles, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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