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High-Performance Organic Field-Effect Transistors Based on pi-Extended Tetrathiafulvalene Derivatives

机译:基于pi扩展的四硫富富瓦烯衍生物的高性能有机场效应晶体管

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摘要

Organic field-effect transistors (OFET) have recently attracted considerable attention for electronic applications such as low-cost integrated circuits and flexible displays.Charge carrier mobility,on/off ratio,threshold voltage,and stability are important key factors that determine the FET performances.Over the recent 20 years,thiophene oligomers and acene molecules have been extensively studied.Recently,tetrathiafulvalene (TTF) derivatives were reported to exhibit excellent FET performances in single crystals.However,because of the strong electron-donating properties of TTFs,their thin films are labile to oxygen,resulting in poor FET performances in thin films.To enhance the air stability,decrease of the electron-donating property is necessary.
机译:有机场效应晶体管(OFET)最近在诸如低成本集成电路和柔性显示器之类的电子应用中引起了相当大的关注。电荷载流子迁移率,开/关比,阈值电压和稳定性是决定FET性能的重要关键因素在最近的20年中,对噻吩低聚物和并苯分子进行了广泛的研究。最近,据报道四硫富瓦烯(TTF)衍生物在单晶中表现出出色的FET性能。薄膜对氧气不稳定,导致薄膜的FET性能差。为了增强空气稳定性,必须降低电子给体的性能。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2005年第29期|p.10142-10143|共2页
  • 作者单位

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

    Department of Electronic Chemistry,Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,Nagatsuta,Midori-ku,Yokohama 226-8502,Materials and Structures Laboratory,Tokyo Institute of Technology,Nagatsuta,Midori-ku,;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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