Hydroxy-Terminated Organic Semiconductor-Based Field-Effect Transistors for Phosphonate Vapor Detection

摘要

Organic field-effect transistors (OFETs) with a hydroxy-functionalized semiconductor incorporated into a receptor layer were fabricated and shown to respond strongly to the analyte dimethyl methylphos-phonate (DMMP) that simulates phosphonate nerve agents. Large and reproducible source-drain current changes were observed upon exposure to DMMP vapor. Compared to single component transistors, OFETs with a mixed hydroxylated and nonhydroxylated semiconductor upper layer exhibited higher sensitivity. We further investigated the selectivity of the heterostructured OFETs by comparing responses upon exposure to different interference vapors with response to DMMP exposure. Much higher response was observed in the case of DMMP, even when the concentration of DMMP vapor was much lower than other analytes. Microstructures of OSC were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), revealing that the organic mixture has similar crystal structure and surface morphology to those of single component OSC films, indicating that the enhanced performance of the mixture is due to its chemical properties, rather than microstructural effects.