Atomic Hydrogen Adsorbate Structures on Graphene

摘要

Graphene, a single atomic layer of graphite, has recently attracted considerable attention due to its remarkable electronic and structural properties and its possible application in the emerging area of graphene based electronic devices and as a hydrogen storage material. The charge carriers in graphene behave like massless Dirac fermions, and graphene exhibits ballistic charge transport properties which make it an ideal material for electronic device and circuit fabrication. However, graphene is a semimetal, a zero band gap semiconductor, and for graphene to become a versatile electronic device material it is mandatory to find means to open up the band gap and tune the size of the band gap opening. Several strategies have been suggested to engineer such a band gap opening in graphene in a controlled way. Some of these are based on the ability to control the geometry of graphene nanoribbons or by use of graphene-substrate interactions, while others are based on chemical reactions of atomic hydrogen with the graphene layer.