首页> 外文期刊>Journal of Solid State Electrochemistry >Electrochemical formation of anodic oxide films on Nb surfaces: ellipsometric and Raman spectroscopical studies
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Electrochemical formation of anodic oxide films on Nb surfaces: ellipsometric and Raman spectroscopical studies

机译:Nb表面上阳极氧化膜的电化学形成:椭偏和拉曼光谱研究

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摘要

Electrochemical formation of anodic oxide films on niobium (Nb) surfaces in 1 M H2SO4 solutions was studied using ellipsometry and Raman spectroscopy. By in situ ellipsometric measurements, the coefficient of film thickness growth and the complex index of refraction of anodic oxide films in the voltage range between 0 and 100 V were determined. The Raman spectra reveal that the thin passive films are amorphous. In the beginning of crystallization, the anodic oxide films consist of mixtures of NbO2 and Nb2O5, while NbO2 is completely transformed to Nb2O5 for thicker and well-crystallized films.
机译:利用椭偏法和拉曼光谱研究了在1M H2 SO4 溶液中铌(Nb)表面上阳极氧化膜的电化学形成。通过原位椭偏测量,确定了0至100 V电压范围内的膜厚增长系数和阳极氧化膜的复折射率。拉曼光谱表明,无源薄膜是非晶态的。在结晶开始时,阳极氧化膜由NbO2 和Nb2 O5 的混合物组成,而NbO2 完全转变为Nb2 O5 用于较厚且结晶良好的薄膜。

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