Effects of oriented growth on properties of Ag/Bi_(4)Ti_(3)O_(12)/p-Si heterostructure prepared by Sol-Gel method with rapid thermal annealing techniques

摘要

Ag/Bi_(4)Ti_(3)O_(12)/p-Si heterostructures were fabricated by Sol-Gel method with rapid thermal annealing techniques. The effects of oriented growth on ferroelectric characteristics and electrical properties of Bi_(4)Ti_(3)O_(12) film were investigated. Bi_(4)Ti_(3)O_(12) films on bare p-Si exhibit preferred c-axis-orientation with the increase of annealing temperature, which would impair the ferroelectric properties but help to drop down the leakage current density of Bi_(4)Ti_(3)O_(12) films. The Polarization-Voltage curves and the electrical characteristics curves show that the Bi_(4)Ti_(3)O_(12) films annealed at 650℃ for 5 min have good ferroelectric and electrical properties with a remanent polarization of 8.3 μC/cm~(2) and a leakage current density of <5×10~(-9) A/cm~(2) at 6 V, which demonstrate that the Ag/Bi_(4)Ti_(3)O_(12)/p-Si heterostructure by Sol-Gel method with rapid thermal annealing techniques is a promising configuration for MFS-FETs applications.