Iron and gold related defects in water quenched silicon

摘要

Thermally induced defects in heat-treated and then quenched in water n-silicon samples have been studied using deep level transient spectroscopy. Two deep levels at energies E_c - 0.48 eV and E_c-0.25 eV are observed in high concentration. The emission rate signatures and annealing characteristics showed the DLTS signal due to level at energy position E_c - 0.48 eV is not only due to Au(A) but some other level also contributes to this signal. The energy state at E_c - 0.25 eV is identified to be pinned with E_c — 0.48 eV. The annealing characteristics also revealed the contribution of Au-Fe complex in DLTS signal of E_c - 0.25 eV level. A complementary behavior of these two levels in annealing characteristics has also been observed.