High density and low resistivity AZO:Si ceramic targets fabricated by slip casting and pressureless sintering using submicron powders

摘要

The aluminum-doped ZnO ceramic targets with 0.05 % silica doping (AZO:Si) were fabricated by slip casting and pressureless sintering using submicron ZnO and Al_2O_3 powders. The structure and properties of the AZO:Si targets were investigated at a temperature range of 1200-1450 ℃. The structure, morphology, and electrical property of the AZO:Si targets were characterized by XRD, SEM and Hall effect. The results show that the silica can used as sintering aids to improve the density, and as donor to increase the conductivity of the AZO targets. The low sintering activity of submicron powders can be compensated by sintering aids and slip casting process. The AZO:Si targets exhibit higher density and conductivity than the pure AZO targets. Those targets fabricated by slip casting show homogeneous structure and large dimension.