Structural, optical and electrical properties of Ru doped MoO_3 thin films and its P-N diode application by JNS pyrolysis technique

摘要

We report that the jet nebulizer spray coating is a promising route to acquire ruthenium doped molybdenum trioxide (RuMoO_3) thin films for the P-N diode application at 500 ℃. The influence of Ru doping (0, 3, 6 and 9 wt%) on structural, optical, dc electrical conductivity and diode properties of MoO_3 was measured by various techniques. From the X-ray diffraction analysis, the films were polycrystalline with an orthorhombic structure of MoO_3. The scanning electron microscope images displayed the dissimilarities of the sub-microsized plate-like structure. The elements of Ru, Mo and O presence were confirmed by the energy dispersive X-ray spectroscopy analysis. From the ultraviolet-visible analysis and current-voltage (Ⅰ-Ⅴ) characterization, 6 % Ru doped MoO_3 film exhibited minimum absorbance in the visible region and maximum conductivity. The diode measurements were taken in darkness and under halogen light source. To calculate the diode parameter values of ideality factor (n), barrier height (Φ_b) and sheet resistance (R_s), we have used different methods of Ⅰ-Ⅴ, Cheung's and Norde.