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首页> 外文期刊>Journal of materials science >Low-temperature sintering and microwave dielectric properties of BaO-0.15ZnO-4TiO_2 ceramics with Li_2O-B_2O_3-SiO_2 addition
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Low-temperature sintering and microwave dielectric properties of BaO-0.15ZnO-4TiO_2 ceramics with Li_2O-B_2O_3-SiO_2 addition

机译:添加Li_2O-B_2O_3-SiO_2的BaO-0.15ZnO-4TiO_2陶瓷的低温烧结和微波介电性能。

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摘要

Li_2O-B_2O_3-SiO_2 (LBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for BaO-0.15ZnO-4TiO_2 (BZT) ceramics and compared with LBS glass. The influence of LBS on the sintering behaviors, phase evolution, microstructure and microwave dielectric properties of the resulting BZT ceramics have been investigated in detail. The addition of LBS significantly lowers the sintering temperature of the BZT ceramics from 1150 to 900 ℃ without damaging its microwave dielectric properties. Small amount of LBS promote the densification of BZT ceramic and improve the dielectric properties. However, excessive LBS additions lead to growth of abnormal grain, deteriorating the dielectric properties of the BZT ceramic. The BZT ceramics doped with 8 wt% LBS addition could be well sintered at 900 ℃ for 0.5 h and show excellent microwave dielectric properties of: ε_r = 27.72, Q × f = 20,381 GHz, τ_f = 5.18 ppm/℃.
机译:选择通过固态反应过程合成的Li_2O-B_2O_3-SiO_2(LBS)作为BaO-0.15ZnO-4TiO_2(BZT)陶瓷的新型烧结助剂,并与LBS玻璃进行了比较。详细研究了LBS对所得BZT陶瓷的烧结行为,相演化,微观结构和微波介电性能的影响。添加LBS可以将BZT陶瓷的烧结温度从1150降低到900℃,而不会损害其微波介电性能。少量的LBS促进BZT陶瓷的致密化并改善介电性能。但是,过量的LBS添加会导致异常晶粒的生长,从而降低BZT陶瓷的介电性能。掺有8 wt%LBS的BZT陶瓷可以在900℃烧结0.5 h,并具有优异的微波介电性能:ε_r= 27.72,Q×f = 20,381 GHz,τ_f= 5.18 ppm /℃。

著录项

  • 来源
    《Journal of materials science》 |2016年第7期|6902-6910|共9页
  • 作者单位

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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