The free-standing multilayer thick films of 0.7Pb(Zr_(0.46)Ti_(0.54)) O_3-0.1Pb(Zn_(1/3)Nb_(2/3))O_3-0.2Pb(Ni_(1/3)Nb_(2/3))O_3 with low co-fired temperature

摘要

High performance free-standing multilayer PNN–PZN–PZT thick films have been successfully fabricated by tape-casting and one step co-fired method. Optimal formulation of slurries has been found. Free-standing multilayer thick films with Ag electrodes were obtained after co-fired at 900 °C. With proper pretreatment, compact structure and well combined PZT layers can be obtained, which indicates the tightly integrated structure of multilayer thick films. Diffusion and permeation between Ag electrodes and PZT layers was not observed in specimens sintered at 900 °C. The influences of organic content and sintering temperature on density and crystallinity were discussed. Nine layered specimens showed great electrical properties: d ~(33), tanδ, ε ~(33)_( T )/ ε ~(0), g ~(33)and Pr of 1880 pC N_(−1), 2.3%, 1067, 199.00 mV m/N, 82.77 µC cm_(−2). The displacement of nine layers specimens under same applied voltage was increased from 901 to 8489 nm compared with bulk ceramics. Those outstanding properties indicate that co-fired free-standing PNN–PZN–PZT multilayer thick films are suitable for application in MEMS system, energy harvesting device and piezoelectric power generation.