首页> 外文期刊>Journal of Materials Research >Intense optical absorption of defects created in Er~(3+)-diffused layer in MgO (5 mol%)-doped LiNbO_3 crystal by local Er~(3+) diffusion under Li-poor atmosphere
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Intense optical absorption of defects created in Er~(3+)-diffused layer in MgO (5 mol%)-doped LiNbO_3 crystal by local Er~(3+) diffusion under Li-poor atmosphere

机译:在贫锂气氛下通过局部Er〜(3+)扩散对掺MgO(5 mol%)的LiNbO_3晶体中Er〜(3+)扩散层产生的缺陷进行强烈的光吸收

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摘要

Intense broad absorption bands centered around 1.7, 2.5, 3.1, and 3.7 eV take place in Er~(3+)-diffused layer formed near MgO (5 mol%)-doped LiNbO_3 crystal surface by in-diffusion of Er metal under Li-poor atmosphere. These bands are tentatively attributed to the defect absorption of small polarons, bipolarons, F-centers, and Q-polarons created due to Er~(3+) in-diffusion and Li_2O loss from the crystal. It is interesting that the number, type, area, and peaking position of the bands can be controlled by the diffusion temperature and further oxidation treatment. Such material is a promising medium for data storage based upon two-color holography.
机译:在掺有MgO(5 mol%)的LiNbO_3晶体表面附近形成的Er〜(3+)扩散层中,通过Er金属在Li-下的扩散,形成了以1.7、2.5、3.1和3.7 eV为中心的强烈宽吸收带。气氛差​​。这些能带暂时归因于由于Er〜(3+)的扩散和晶体中Li_2O的损失而产生的小极化子,双极化子,F中心和Q极化子的缺陷吸收。有趣的是,带的数量,类型,面积和峰位置可以通过扩散温度和进一步的氧化处理来控制。这种材料是用于基于双色全息术的数据存储的有前途的介质。

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  • 来源
    《Journal of Materials Research》 |2012年第11期|p.1482-1487|共6页
  • 作者单位

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Opto-electronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Opto-electronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Opto-electronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Opto-electronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Opto-electronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China;

    Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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